The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Aug. 11, 2009
Applicant:
Hidenori Kawata, Chino, JP;
Inventor:
Hidenori Kawata, Chino, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/112 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin film transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes a channel region, a source region, a drain region, a low-concentration impurity region provided between the channel region and the source or drain region and a high-concentration impurity region. The high-concentration impurity region overlaps with the gate electrode.
Kawata, Hidenori. (2012). Thin film transistor with a high impurity region overlapping the gate electrode (U.S. Patent No. 8263982). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8263982
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile