The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Nov. 24, 2010
Young-lim Park, Hwaseong-si, KR;
Jinil Lee, Seongnam-si, KR;
Dongho Ahn, Hwaseong-si, KR;
Sihyung Lee, Suwon-si, KR;
Gyuhwan OH, Hwaseong-si, KR;
Young-Lim Park, Hwaseong-si, KR;
Jinil Lee, Seongnam-si, KR;
Dongho Ahn, Hwaseong-si, KR;
Sihyung Lee, Suwon-si, KR;
Gyuhwan Oh, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.