The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Jan. 24, 2011
Dong-yu Kim, Gwangju, KR;
Bogyu Lim, Gwangju, KR;
Kang-jun Baeg, Gwangju, KR;
Hyung-gu Jeong, Gwangju, KR;
Seung-hwan OH, Gwangju, KR;
Hong-ju Park, Gwangju, KR;
Dong-Yu Kim, Gwangju, KR;
Bogyu Lim, Gwangju, KR;
Kang-Jun Baeg, Gwangju, KR;
Hyung-Gu Jeong, Gwangju, KR;
Seung-Hwan Oh, Gwangju, KR;
Hong-Ju Park, Gwangju, KR;
Gwangju Institute of Sciences and Technology, Gwangju, KR;
Abstract
Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.