The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Mar. 15, 2010
Applicants:
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Inventors:
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Assignee:
Waseda University, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.