The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Oct. 30, 2009
Applicant:

Alan Chingtao Kan, Diamond Bar, CA (US);

Inventor:

Alan Chingtao Kan, Diamond Bar, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/16 (2006.01); G06F 11/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile semiconductor memory is disclosed comprising a first memory device having a memory array including a plurality of memory segments, and a data register for storing write data prior to being written to one of the memory segments. A memory controller comprises a microprocessor for executing access commands received from a host. Interface circuitry generates control signals that enable the microprocessor to communicate with the first memory device. Power fail circuitry transmits a flush command to the first memory device through the interface circuitry in response to a power fail signal, wherein the first memory device responds to the flush command by transferring the write data stored in the data register to the memory segment.


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Kan, Alan. (2012). Non-volatile semiconductor memory comprising power fail circuitry for flushing write data in response to a power fail signal (U.S. Patent No. 8261012). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8261012

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