The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Jun. 08, 2010
Applicants:

Jack Z. Peng, San Jose, CA (US);

David Fong, San Jose, CA (US);

Inventors:

Jack Z. Peng, San Jose, CA (US);

David Fong, San Jose, CA (US);

Assignee:

Sichuan Kiloway Electronics Inc., Mian Yang, Sichuan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell has at least two word lines and at least two bit lines. The cell also has a first select device being connected to at least one word line and one bit line and a gate capacitor element connected to at least one word line and the first select device. The cell also has a sense device being connected in series to the gate capacitor element and the first select device. The sense device is connected to at least two bit lines.


Find Patent Forward Citations

Peng, Jack. (2012). Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense mosfet (U.S. Patent No. 8259518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8259518

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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