The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
May. 28, 2010
Kazuhiko Oyama, Fukuoka, JP;
Kazuhiko Oyama, Fukuoka, JP;
NSCore Inc., Fukuoka, JP;
Abstract
A nonvolatile memory device includes one or more reference cell transistors, one or more memory cell transistors, and a current source circuit including three or more field effect transistors that have gates thereof connected together, the three or more field effect transistors including two or more field effect transistors and another field effect transistor, currents flowing through the two or more field effect transistors being combined to flow through the one or more reference cell transistors, and another field effect transistor having a drain thereof connected to one of the one or more memory cell transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile