The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Sep. 20, 2010
Yasuhiko Honda, Hiratsuka, JP;
Yasuhiko Honda, Hiratsuka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A NAND flash memory having a memory cell array formed of a plurality of blocks including memory cell transistors arranged in a matrix form. The NAND flash memory has a first bit line; a first sense amplifier connected to the first bit line, the first sense amplifier sensing or controlling a potential on the first bit line; a second bit line; and a second sense amplifier connected to the second bit line to sense or control a potential on the second bit line. The NAND flash memory has a first drain side selection gate line; a second drain side selection gate line; a third drain side selection gate line; a fourth drain side selection gate line; a first source side selection gate line; and a second source side selection gate line. The NAND flash memory has a first block; a second block; and a decoder which turns on one of the first and third drain side selection MOS transistors and turns off the other, and which turns on one of the third and fourth drain side selection MOS transistors and turns off the other.