The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Mar. 17, 2008
Andreas G. Andreou, Baltimore, MD (US);
Miriam Adlerstein Marwick, Baltimore, MD (US);
Philippe O. Pouliquen, Baltimore, MD (US);
Andreas G. Andreou, Baltimore, MD (US);
Miriam Adlerstein Marwick, Baltimore, MD (US);
Philippe O. Pouliquen, Baltimore, MD (US);
Johns Hopkins University, Baltimore, MD (US);
Abstract
An avalanche photodiode is disclosed. The avalanche photodiode includes a substrate of a first conductivity type. A first well of a second conductivity type is formed within the substrate. A second well of the second conductivity type is formed substantially overlying and extending into the first well. A heavily doped region of the first conductivity type is formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region. A guard ring is formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region. An outer well ring of the second conductivity type is formed about the perimeter of the deep well and the guard ring.