The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Aug. 31, 2009
Applicant:

Andrew E. Carlson, Franklin, MA (US);

Inventor:

Andrew E. Carlson, Franklin, MA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a gate on a semiconductor substrate. One side wall of the gate may include at least one protrusion and an opposite side wall of the gate may include at least one depression. A contact is formed through an insulating layer disposed over the gate. The contact at least partially overlaps at least one of the protrusions in the gate. A metal layer is disposed on the insulating layer. The metal layer includes a first structure shifted to a first side of the gate. The first structure at least partially overlaps the contact such that the contact electrically couples the first structure to the gate through the insulating layer.


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