The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Sep. 10, 2010
Richard K. Williams, Cupertino, CA (US);
Donald Ray Disney, Cupertino, CA (US);
Wai Tien Chan, Hong Kong, CN;
Richard K. Williams, Cupertino, CA (US);
Donald Ray Disney, Cupertino, CA (US);
Wai Tien Chan, Hong Kong, CN;
Advanced Analogic Technologies, Inc., Santa Clara, CA (US);
Advanced Analogic Technologies (Hong Kong) Limited, Hong Kong, CN;
Abstract
A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of the first conductivity type which extends under the gate. The body region may have a non-monotonic vertical doping profile with a portion located deeper in the substrate having a higher doping concentration than a portion located shallower in the substrate. The lateral MOSFET is drain-centric, with the source region and a dielectric-filled trench surrounding the drain region.