The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
May. 24, 2010
Hsin- Fei Meng, Hsinchu, TW;
Sheng-fu Horng, Hsinchu, TW;
Yu-chiang Chao, Hsinchu, TW;
Chun-yu Chen, Hsinchu, TW;
Wei-jen Lai, Hsinchu, TW;
Hsin- Fei Meng, Hsinchu, TW;
Sheng-Fu Horng, Hsinchu, TW;
Yu-Chiang Chao, Hsinchu, TW;
Chun-Yu Chen, Hsinchu, TW;
Wei-Jen Lai, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.