The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Jul. 31, 2008
Applicants:

Won-joo Kim, Hwaseong-si, KR;

Dae-kil Cha, Seoul, KR;

Tae-hee Lee, Yongin-si, KR;

Yoon-dong Park, Yongin-si, KR;

Inventors:

Won-joo Kim, Hwaseong-si, KR;

Dae-kil Cha, Seoul, KR;

Tae-hee Lee, Yongin-si, KR;

Yoon-dong Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on the semiconductor substrate and on opposing sides of the body region, and first and second impurity doped regions disposed on an upper surface of the body region. The gate patterns may be separated from the first and second impurity doped regions by, or greater than, a desired distance, such that the gate patterns do not to overlap the first and second impurity doped regions in a direction perpendicular to the first and second impurity doped regions.


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