The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Mar. 03, 2005
Ansgar Werner, Dresden, DE;
Olaf Kühl, Markkleeberg, DE;
Simon Gessler, Heidelberg, DE;
Horst Hartmann, Dresden, DE;
Andre Grüssing, Dresden, DE;
Michael Limmert, Dresden, DE;
Andrea Lux, Dresden, DE;
Kentaro Harada, Dresden, DE;
Ansgar Werner, Dresden, DE;
Olaf Kühl, Markkleeberg, DE;
Simon Gessler, Heidelberg, DE;
Horst Hartmann, Dresden, DE;
Andre Grüssing, Dresden, DE;
Michael Limmert, Dresden, DE;
Andrea Lux, Dresden, DE;
Kentaro Harada, Dresden, DE;
Novaled AG, Dresden, DE;
Abstract
A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.