The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Jun. 08, 2010
Applicants:

Stephen Ernest Jacobson, Hockessin, DE (US);

Sourav Kumar Sengupta, Wilmington, DE (US);

John Joseph Hagedorn, Newark, DE (US);

Liza Lopez, Elkton, MD (US);

Inventors:

Stephen Ernest Jacobson, Hockessin, DE (US);

Sourav Kumar Sengupta, Wilmington, DE (US);

John Joseph Hagedorn, Newark, DE (US);

Liza Lopez, Elkton, MD (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07C 17/361 (2006.01); C07C 17/26 (2006.01); C07C 19/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved process for producing perfluoroalkyl iodides of formula (I)F(CFCF)—I  (I)wherein n is an integer from 2 to 3, wherein the improvement comprises contacting at least one perfluoroalkyl iodide of formula (II) and at least one perfluoroalkyl iodide of formula (III)F(CFCF)—I  (II)F(CFCF)—I  (III)wherein m is an integer greater than or equal to 3, and p is an integer equal to or lower than 2, at a) a molar ratio of formula (III) to formula (II) of from about 1:1 to about 6:1, b) a residence time of from about 1 to about 9 seconds, and c) a temperature of from about 450° C. to about 495° C.


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