The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
May. 17, 2009
Naho Mizuhara, Itami, JP;
Koji Uematsu, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Hideaki Nakahata, Itami, JP;
Seiji Nakahata, Itami, JP;
Takuji Okahisa, Itami, JP;
Naho Mizuhara, Itami, JP;
Koji Uematsu, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Hideaki Nakahata, Itami, JP;
Seiji Nakahata, Itami, JP;
Takuji Okahisa, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal () having a major surface () of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal () into a plurality of III-nitride crystal substrates (), () having major surfaces (), () of the designated plane orientation; a step of disposing the substrates (), () adjoining each other sideways in such a way that the major surfaces (), (qm) of the substrates (), () parallel each other and so that the [0001] directions in the substrates (), () are oriented in the same way; and a step of growing III-nitride crystal () onto the major surfaces (), () of the substrates (), ().