The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Jun. 29, 2010
Ken Inoue, Kanagawa, JP;
Ken Inoue, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A manufacturing method of a semiconductor device includes: forming a wiring in a first interlayer insulating layer in a first region; etching an surface portion of the first interlayer insulating layer in a second region; forming a plurality of opening portions extended below in the etched region; and forming a lower electrode layer, a dielectric layer, and a common upper electrode in each of the plurality of opening portions to form a plurality of capacitance portions. The step of forming the plurality of capacitance portions, includes: forming the common upper electrode so that an upper surface of the first interlayer insulating layer and an upper surface of the common upper electrode approximately lie in the same plane.