The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Oct. 17, 2008
Applicants:

Liang Chen, Woburn, MA (US);

Chingyin Hong, Lexington, MA (US);

Fuwan Gan, Woburn, MA (US);

Dong Pan, Andover, MA (US);

Inventors:

Liang Chen, Woburn, MA (US);

Chingyin Hong, Lexington, MA (US);

Fuwan Gan, Woburn, MA (US);

Dong Pan, Andover, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit.


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Chen, Liang. (2012). Semiconductor photodetectors (U.S. Patent No. 8257997). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8257997

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