The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2012

Filed:

Dec. 11, 2009
Applicants:

Mohamed M Hilali, Sunnyvale, CA (US);

Venkatesan Murali, Santa Clara, CA (US);

Gopal Prabhu, San Jose, CA (US);

Zhiyong LI, San Jose, CA (US);

Inventors:

Mohamed M Hilali, Sunnyvale, CA (US);

Venkatesan Murali, Santa Clara, CA (US);

Gopal Prabhu, San Jose, CA (US);

Zhiyong Li, San Jose, CA (US);

Assignee:

Twin Creeks Technologies, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 21/78 (2006.01); H01L 21/301 (2006.01);
U.S. Cl.
CPC ...
Abstract

A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can be repaired by annealing the lamina using microwave energy. If the lamina is bonded to a receiver element, the receiver element may be either transparent to microwaves, or may reflect microwaves, while the semiconductor material absorbs the microwaves. In this way the lamina can be annealed at high temperature while the receiver element remains cooler.


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