The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Dec. 08, 2008
Applicant:
Yasushi Funakoshi, Osaka, JP;
Inventor:
Yasushi Funakoshi, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for manufacturing a solar cell, including: diffusing p type impurity into at least a portion of a first surface, which is one surface of a silicon substrate, to form a high concentration p type impurity diffusion layer; and etching one of the first surface of the silicon substrate and a second surface of the silicon substrate opposite to the first surface, using as a mask at least one of the high concentration p type impurity diffusion layer and a film formed on the high concentration p type impurity diffusion layer upon forming the high concentration p type impurity diffusion layer.