The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Jan. 11, 2010
Yeong-beom Lee, Hwaseong-si, KR;
Hi-kuk Lee, Yongin-si, KR;
Byung-uk Kim, Hwaseong-si, KR;
Hyoc-min Youn, Hwaseong-si, KR;
Ki-hyuk Koo, Hwaseong-si, KR;
Yeong-Beom Lee, Hwaseong-si, KR;
Hi-Kuk Lee, Yongin-si, KR;
Byung-Uk Kim, Hwaseong-si, KR;
Hyoc-Min Youn, Hwaseong-si, KR;
Ki-Hyuk Koo, Hwaseong-si, KR;
Abstract
A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent: