The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Dec. 21, 2009
Jacqueline Fidanza, San Francisco, CA (US);
Brian M. Sager, Palo Alto, CA (US);
Martin R. Roscheisen, San Francisco, CA (US);
Dong Yu, Fremont, CA (US);
Gina J. Gerritzen, San Jose, CA (US);
Jacqueline Fidanza, San Francisco, CA (US);
Brian M. Sager, Palo Alto, CA (US);
Martin R. Roscheisen, San Francisco, CA (US);
Dong Yu, Fremont, CA (US);
Gina J. Gerritzen, San Jose, CA (US);
Nanosolar, Inc., San Jose, CA (US);
Abstract
Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.