The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
May. 09, 2011
Sung Chung Park, Daejeon, KR;
Jun Jin Kong, Yongin-si, KR;
Young Hwan Lee, Suwon-si, KR;
Dong Ku Kang, Seongnam-si, KR;
Sung Chung Park, Daejeon, KR;
Jun Jin Kong, Yongin-si, KR;
Young Hwan Lee, Suwon-si, KR;
Dong Ku Kang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions.