The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2012

Filed:

Oct. 14, 2008
Applicants:

Kiminori Mizuuchi, Ehime, JP;

Kazuhisa Yamamoto, Osaka, JP;

Tetsuro Mizushima, Osaka, JP;

Inventors:

Kiminori Mizuuchi, Ehime, JP;

Kazuhisa Yamamoto, Osaka, JP;

Tetsuro Mizushima, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A GaN-based semiconductor laser () emits first laser light of a single polarization and having a first wavelength. An optical resonator () includes a solid-state laser medium which is excited by incidence of the laser light and which oscillates second laser light having a second wavelength different from the first wavelength. A polarization switch () switches over at least one of polarization directions of the first laser light and the second laser light to thereby change the wavelength of laser light to be emitted from the optical resonator () or the intensity ratio between a plurality of laser light to be emitted from the optical resonator (). With the above arrangement, a plurality of laser light can be used effectively.


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