The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Dec. 15, 2009
Masaaki Higuchi, Yokohama, JP;
Hiroshi Matsuba, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Tetsuya Kai, Yokohama, JP;
Masaaki Higuchi, Yokohama, JP;
Hiroshi Matsuba, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Tetsuya Kai, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor region, a tunnel insulating film formed on the semiconductor region, a charge-storage insulating film formed on the tunnel insulating film, a block insulating film formed on the charge-storage insulating film, and a control gate electrode formed on the block insulating film, wherein the tunnel insulating film comprises a first region which is formed on a surface of the semiconductor region and contains silicon and oxygen, a second region which contains silicon and nitrogen, a third region which is formed on a back surface of the charge-storage insulating film and contains silicon and oxygen, and an insulating region which is formed at least between the first region and the second region or between the second region and the third region, and contains silicon and nitrogen and oxygen and the second region is formed between the first region and the third region.