The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Mar. 19, 2008
Takashi Shingu, Kanagawa, JP;
Hideki Matsukura, Kanagawa, JP;
Takashi Shingu, Kanagawa, JP;
Hideki Matsukura, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
It is an object to provide an element structure of a semiconductor device for having a sufficient contact area between an electrode in contact with a source region or a drain region and the source region or the drain region, and a method for manufacturing the semiconductor device with the element structure. An upper electrode is formed over a high-concentration impurity region (the source region or the drain region). A contact hole passing through an interlayer insulating film is formed overlapping with a region where the upper electrode and the high-concentration impurity region are stacked.