The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2012

Filed:

Jun. 23, 2009
Applicants:

Matthew M. Wronski, Toronto, CA;

Giovanni Decrescenzo, Toronto, CA;

Alla Reznik, Toronto, CA;

Wei Zhao, Stony Brook, NY (US);

Jennifer Ann Segui, Stony Brook, NY (US);

John A. Rowlands, Toronto, CA;

Inventors:

Matthew M. Wronski, Toronto, CA;

Giovanni DeCrescenzo, Toronto, CA;

Alla Reznik, Toronto, CA;

Wei Zhao, Stony Brook, NY (US);

Jennifer Ann Segui, Stony Brook, NY (US);

John A. Rowlands, Toronto, CA;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photodetector/imaging device comprises a layer of photoconductive material converting incident electromagnetic radiation into electrical charges, the layer of photoconductive material being capable of avalanche multiplication when an electric field of sufficient magnitude is applied thereacross; a readout layer detecting the electrical charge; and at least one interface layer between the layer of photoconductive material and the readout layer, the interface layer coupling electrical charge to or from the layer of photoconductive material and being configured to inhibit uncontrolled rises in current in the photoconductive material during avalanche multiplication.


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