The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Aug. 02, 2011
Applicants:
Rongsheng Yang, San Jose, CA (US);
Zhiqiang Lin, Santa Clara, CA (US);
Inventors:
Rongsheng Yang, San Jose, CA (US);
Zhiqiang Lin, Santa Clara, CA (US);
Assignee:
OmniVision Technologies, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/00 (2006.01); H01L 29/735 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 29/76 (2006.01); H01L 31/112 (2006.01); H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
An example complementary metal oxide semiconductor (CMOS) image sensor includes an epitaxial layer, an array of pixels, and a trench capacitor. The array of pixels are formed on a front side of the epitaxial layer in an pixel array area of the image sensor. The array of pixels includes one or more shallow trench isolation structures disposed between adjacent pixels for isolating the pixels in the pixel array area. The trench capacitor is formed on the front side of the epitaxial layer in a peripheral circuitry area of the image sensor.