The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Oct. 07, 2010
Shigeru Kusunoki, Chiyoda-ku, JP;
Junji Yahiro, Chiyoda-ku, JP;
Yoshihiko Hirota, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an ntype emitter region in the p type base region, an ntype cathode region adjacent to an end surface of the semiconductor substrate and not penetrating the semiconductor substrate, a ptype collector region in a second main surface, a first main electrode, a second main electrode, a third main electrode, and a connection portion connecting the second main electrode and the third main electrode. A resistance between the p type base region and the ntype cathode region is greater than a resistance between the p type base region and the ptype collector region. In the high voltage semiconductor device in which an IGBT and a free wheel diode are formed in a single semiconductor substrate, occurrence of a snap-back phenomenon is suppressed.