The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Mar. 17, 2011
Jun-rong Chen, Taichung, TW;
Chi-wen Kuo, Tainan, TW;
Kun-fu Huang, Miaoli County, TW;
Jui-yi Chu, Taichung County, TW;
Kuo-lung Fang, Hsinchu County, TW;
Jun-Rong Chen, Taichung, TW;
Chi-Wen Kuo, Tainan, TW;
Kun-Fu Huang, Miaoli County, TW;
Jui-Yi Chu, Taichung County, TW;
Kuo-Lung Fang, Hsinchu County, TW;
Lextar Electronics Corp., Hsinchu, TW;
Abstract
A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.