The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Nov. 21, 2008
Ho Sun Paek, Gyunggi-do, KR;
Sung Nam Lee, Gyunggi-do, KR;
Ten Sakong, Gyunggi-do, KR;
Youn Joon Sung, Gyunggi-do, KR;
IN Hoe Hur, Gyunggi-do, KR;
Ho Sun Paek, Gyunggi-do, KR;
Sung Nam Lee, Gyunggi-do, KR;
Ten Sakong, Gyunggi-do, KR;
Youn Joon Sung, Gyunggi-do, KR;
In Hoe Hur, Gyunggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-Do, KR;
Abstract
There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.