The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
May. 17, 2010
Keun-hee Bai, Suwon-si, KR;
Chul-ho Shin, Yongin-si, KR;
Shin-hye Kim, Suwon-si, KR;
Sang-kuk Kim, Seoul, KR;
Keun-Hee Bai, Suwon-si, KR;
Chul-Ho Shin, Yongin-si, KR;
Shin-Hye Kim, Suwon-si, KR;
Sang-Kuk Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
In a method of forming a semiconductor cell structure, a first insulating layer may be formed on a semiconductor substrate. A connection pattern may be formed in the first insulating layer. Second and third insulating layers may be sequentially formed on the connection pattern. The third insulating layer may be etched at least twice and the second insulating layer may be etched at least once to form a through hole in the second and third insulating layers. The through hole may expose the connection pattern.