The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Mar. 29, 2010
Yih-jau Chang, Zhudong Township, Hsinchu County, TW;
Shang-hui Tu, Tainan, TW;
Gene Sheu, Wufeng Township, Taichung County, TW;
Yi-fong Chang, Dali, TW;
Nithin Devarajulu Palavalli, Wufeng Township, Taichung County, TW;
Yih-Jau Chang, Zhudong Township, Hsinchu County, TW;
Shang-Hui Tu, Tainan, TW;
Gene Sheu, Wufeng Township, Taichung County, TW;
Yi-Fong Chang, Dali, TW;
Nithin Devarajulu Palavalli, Wufeng Township, Taichung County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure is provided. A second conductivity type well region is formed on a first conductivity type substrate. A second conductivity type diffused source and second conductivity type diffused drain are formed on the first conductivity type substrate. A gate structure is formed on the second conductivity type well region between the second conductivity type diffused source and the second conductivity type diffused drain. First conductivity type buried rings are arranged in a horizontal direction, and formed in the second conductivity type well region, and divide the second conductivity type well region into an upper drift region and a lower drift region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile