The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Mar. 13, 2011
Yoji Kawasaki, Kanagawa, JP;
Yoji Kawasaki, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A semiconductor device having a FIN type transistor including a FIN-shape semiconductor portion improved for reliability by suppressing scattering of the characteristics of the FIN-shape transistor by decreasing a difference between impurity concentration at an upper surface and impurity concentration on a lateral side of the FIN-shape semiconductor portion, in which a pad insulating film at a thickness of about 2 to 5 nm is formed to the upper surface of the FIN-shape semiconductor portion, cluster ions are implanted to one lateral side of the FIN-shape semiconductor portion from an oblique direction at a first implantation angle θand then cluster ions are implanted to another lateral side of the FIN-shape semiconductor portion from an oblique direction at a second implantation angle θin symmetrical with the first implantation angle θand, subsequently, the cluster ions implanted to the FIN-shape semiconductor portionare activated to form a diffusion region that forms a portion of a source region and a drain region.