The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Feb. 08, 2008
Applicant:
Bulent M. Basol, Manhattan Beach, CA (US);
Inventor:
Bulent M. Basol, Manhattan Beach, CA (US);
Assignee:
SoloPower, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer.