The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2012

Filed:

Jun. 13, 2008
Applicants:

Masakatsu Ikisawa, Ibaraki, JP;

Masataka Yahagi, Ibaraki, JP;

Kozo Osada, Ibaraki, JP;

Takashi Kakeno, Ibaraki, JP;

Inventors:

Masakatsu Ikisawa, Ibaraki, JP;

Masataka Yahagi, Ibaraki, JP;

Kozo Osada, Ibaraki, JP;

Takashi Kakeno, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mΩcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.


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