The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Dec. 14, 2009
Applicants:

Ercole Rosario Di Iorio, Scurcola Marsicana, IT;

Giulio Giuseppe Marotta, Contigliano, IT;

Marco Domenico Tiburzi, Avezzano, IT;

Pranav Kalavade, San Jose, CA (US);

Inventors:

Ercole Rosario Di Iorio, Scurcola Marsicana, IT;

Giulio Giuseppe Marotta, Contigliano, IT;

Marco Domenico Tiburzi, Avezzano, IT;

Pranav Kalavade, San Jose, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The threshold voltage range of a multilevel memory cell may be increased without using a negative voltage pump. In one embodiment, an added positive voltage may be applied to the source of the selected cell. A boost voltage may be applied to the output of a sense amplifier. Non-ideal characteristics of a buffer that supplies the voltage to the selected cell may be compensated for in some embodiments.


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