Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line

Abstract

In a method of programming a non-volatile memory device, a first voltage is applied to a selected word line corresponding to a selected memory cell transistor of a selected transistor string to be programmed; a second voltage is applied to a neighboring word line neighboring the selected word line and corresponding to a neighboring transistor of the selected transistor string, wherein the first voltage is greater than the second voltage, the application of the first and second voltages to the selected and neighboring word lines respectively causing electrons to be generated by an electric field formed between the neighboring transistor and the selected memory cell transistor, the electrons accelerating toward the selected memory cell transistor and injecting into a charge storage layer of the selected memory cell transistor; wherein the neighboring transistor is positioned between the selected memory cell transistor and one of a ground select transistor and a string select transistor, and the first voltage is applied to unselected word lines corresponding to unselected memory cell transistors of the selected transistor string positioned between the selected memory cell transistor and the other of the ground select transistor and the string select transistor.