The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Nov. 19, 2009
Shinji Takeoka, Leuven, BE;
Shinji Takeoka, Leuven, BE;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a first MISFET and a second MISFET, wherein the first MISFET includes a semiconductor substrate, a first gate insulating filmand a first gate electrodeformed on the first region of the semiconductor substrate, and first side walls () formed on the side surface of the first gate electrode, and the second MISFET includes a second gate insulating filmand a second gate electrodeformed on the second region of the semiconductor substrate, and second side walls () formed on the side surface of the second gate electrode. The width of the first side wall is smaller than the width of the second side wall, and the second side wall includes the second spacercontaining a higher concentration of hydrogen than the first spacer
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile