The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Apr. 15, 2010
Applicant:

Toshiaki Takeshita, Kawasaki, JP;

Inventor:

Toshiaki Takeshita, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor storage device and method of manufacturing same at a lower cost by without forming a photolithographic resist. Second impurity regions are arranged in such a manner that second impurity regions adjacent along the column direction are joined together. A select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction.


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