The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jun. 04, 2008
Applicants:
Liberty L Gunter, Hudson, NH (US);
Kanin Chu, Nashua, NH (US);
Charles R Eddy, Jr., Columbia, MD (US);
Theodore D Moustakas, Dover, MA (US);
Enrico Bellotti, Watertown, MA (US);
Inventors:
Liberty L Gunter, Hudson, NH (US);
Kanin Chu, Nashua, NH (US);
Charles R Eddy, Jr., Columbia, MD (US);
Theodore D Moustakas, Dover, MA (US);
Enrico Bellotti, Watertown, MA (US);
Assignee:
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
Gunter, Liberty. (2012). Gan-based permeable base transistor and method of fabrication (U.S. Patent No. 8247843). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8247843
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile