The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jun. 14, 2010
Applicants:
Seung Hun Hong, Seoul, KR;
Byeong Ju Kim, Seoul, KR;
Moon Sook Lee, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field-effect transistor has at least one electrode disposed independently of source and drain electrodes and in direct contact with the surface of a semiconductor channel to form a schottky barrier, so that it is possible to easily control the schottky barrier.
Hong, Seung. (2012). Field-effect transistor and sensor based on the same (U.S. Patent No. 8247797). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8247797
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile