The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jun. 13, 2008
Ken Nakahara, Kyoto, JP;
Shunsuke Akasaka, Kyoto, JP;
Masashi Kawasaki, Miyagi, JP;
Akira Ohtomo, Miyagi, JP;
Atsushi Tsukazaki, Miyagi, JP;
Ken Nakahara, Kyoto, JP;
Shunsuke Akasaka, Kyoto, JP;
Masashi Kawasaki, Miyagi, JP;
Akira Ohtomo, Miyagi, JP;
Atsushi Tsukazaki, Miyagi, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layersand acceptor-doped ZnO layers. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.