The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Feb. 26, 2010
Kwang-soo Seol, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Deok-kee Kim, Seoul, KR;
Sang-jun Choi, Yongin-si, KR;
Kwang-soo Seol, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Deok-kee Kim, Seoul, KR;
Sang-jun Choi, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor.