The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Dec. 16, 2009
Jonathan Mack Frey, Denver, CO (US);
Robert Dwayne Gossmann, Aurora, CO (US);
Mehran Sadeghi, Orpington, GB;
Scott Daniel Feldman-peabody, Golden, CO (US);
Jennifer A. Drayton, Golden, CO (US);
Victor Kaydanov, Lakewood, CO (US);
Jonathan Mack Frey, Denver, CO (US);
Robert Dwayne Gossmann, Aurora, CO (US);
Mehran Sadeghi, Orpington, GB;
Scott Daniel Feldman-Peabody, Golden, CO (US);
Jennifer A. Drayton, Golden, CO (US);
Victor Kaydanov, Lakewood, CO (US);
PrimeStar Solar, Inc., Arvada, CO (US);
Abstract
A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.