The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8247319 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 21, 2012

Filed:

Feb. 07, 2011
Applicants:

Benjamin Luke Fletcher, Elmsford, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Siegfried Lutz Maurer, Stormville, NY (US);

Zhen Zhang, Ossining, NY (US);

Inventors:

Benjamin Luke Fletcher, Elmsford, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Siegfried Lutz Maurer, Stormville, NY (US);

Zhen Zhang, Ossining, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.


Find Patent Forward Citations

Fletcher, Benjamin. (2012). Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions (U.S. Patent No. 8247319). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8247319

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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