The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
May. 13, 2010
Byoungkeon Park, Yongin-si, KR;
Taehoon Yang, Yongin-si, KR;
Jinwook Seo, Yongin-si, KR;
Seihwan Jung, Yongin-si, KR;
Kiyong Lee, Yongin-si, KR;
Maxim Lisachenko, Yongin-si, KR;
Byoungkeon Park, Yongin-si, KR;
Taehoon Yang, Yongin-si, KR;
Jinwook Seo, Yongin-si, KR;
Seihwan Jung, Yongin-si, KR;
Kiyong Lee, Yongin-si, KR;
Maxim Lisachenko, Yongin-si, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer.