The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8247299 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 21, 2012

Filed:

Jan. 16, 2008
Applicants:

Phil Soon Jang, Goyang-si, KR;

Hee Hyun Chang, Seongnam-si, KR;

Inventors:

Phil Soon Jang, Goyang-si, KR;

Hee Hyun Chang, Seongnam-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, Kyoungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a flash memory device and a fabrication method thereof. In an embodiment, a flash memory device includes a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate, an isolation layer formed in a field region of the semiconductor substrate and projected higher than the floating gate, a dielectric layer formed over the semiconductor substrate including the floating gate and the isolation layer, and a control gate formed on the dielectric layer.


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Jang, Phil. (2012). Flash memory device and fabrication method thereof (U.S. Patent No. 8247299). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8247299

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