The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jun. 05, 2008
Naoki Makita, Osaka, JP;
Masato Hashimoto, Osaka, JP;
Naoki Makita, Osaka, JP;
Masato Hashimoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device includes at least one thin-film transistor, which includes: a crystalline semiconductor layerincluding a regionto be a channel region and source and drain regions; a gate electrodefor controlling the conductivity of the regionto be a channel region; a gate insulating filmarranged between the semiconductor layerand the gate electrode; and source and drain electrodesconnected to the source and drain regions, respectively. At least one of the source and drain regionscontains an element to be a donor or an acceptor and a rare-gas element, but the regionto be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.