The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
May. 06, 2011
Jin-seong Park, Suwon-si, KR;
Kwang-suk Kim, Suwon-si, KR;
Jong-han Jeong, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Steve Y. G. MO, Suwon-si, KR;
Jin-Seong Park, Suwon-si, KR;
Kwang-Suk Kim, Suwon-si, KR;
Jong-Han Jeong, Suwon-si, KR;
Jae-Kyeong Jeong, Suwon-si, KR;
Steve Y. G. Mo, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Giheung-Gu, Yongin, Gyunggi-Do, KR;
Abstract
A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×10to 1×10#cmby controlling an amount of Zr.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile